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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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M28R400CT 数据表(PDF) 24 Page - STMicroelectronics |
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M28R400CT 数据表(HTML) 24 Page - STMicroelectronics |
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24 / 48 page  M28R400CT, M28R400CB 24/48 Table 16. Write AC Characteristics, Write Enable Controlled Note: 1. Sampled only, not 100% tested. 2. Applicable if VPP is seen as a logic input (VPP < 2.2V). Symbol Alt Parameter M28R400C Unit 90 120 tAVAV tWC Write Cycle Time Min 90 120 ns tAVWH tAS Address Valid to Write Enable High Min 50 50 ns tDVWH tDS Data Valid to Write Enable High Min 50 50 ns tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 ns tELQV Chip Enable Low to Output Valid Min 90 120 ns tQVVPL (1,2) Output Valid to VPP Low Min 0 0 ns tQVWPL Output Valid to Write Protect Low Min 0 0 ns tVPHWH (1) tVPS VPP High to Write Enable High Min 200 200 ns tWHAX tAH Write Enable High to Address Transition Min 0 0 ns tWHDX tDH Write Enable High to Data Transition Min 0 0 ns tWHEH tCH Write Enable High to Chip Enable High Min 0 0 ns tWHEL Write Enable High to Chip Enable Low Min 30 30 ns tWHGL Write Enable High to Output Enable Low Min 30 30 ns tWHWL tWPH Write Enable High to Write Enable Low Min 30 30 ns tWLWH tWP Write Enable Low to Write Enable High Min 50 50 ns tWPHWH Write Protect High to Write Enable High Min 50 50 ns |
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