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MIP516 数据表(PDF) 2 Page - Panasonic Semiconductor |
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MIP516 数据表(HTML) 2 Page - Panasonic Semiconductor |
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2 / 3 page ![]() MIP516 2 SLB00059AED ■ Electrical Characteristics T C = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Drain-source ON resistance RDS(on) VIN = 5 V, IDS = 1 A 0.70 0.90 Ω Drain-source voltage VDS(on) VIN = 5 V, I DS = 1 A 0.70 0.90 V Drain clamp voltage VDS(CLP) VIN = 0 V, IDS = 3 mA 45 52 V Drain-source cutoff current 1 IDS(off)1 VIN = 0 V, VDS = 12 V 0.01 5.00 µA Drain-source cutoff current 2 IDS(off)2 VIN = 0 V, V DS = 25 V 0.02 8.00 Drain-source cutoff current 3 IDS(off)3 VIN = 0 V, VDS = 40 V 0.08 10.00 Input voltage high-level VIN(H) IDS = 0.5 A 4 V Input voltage low-level VIN(L) IDS = 1 mA 0.80 V Input current (normal) IIN(on) VIN = 5 V, VDS = 0 V 0.3 0.5 mA Input current (act on protection) * IIN(PROT) VIN = 5 V 0.75 1.10 mA Over current protection limit IOCP VIN = 5 V 1.1 1.7 A Short circuit load protection limit VDS(SHT) VIN = 5 V 1.0 1.6 V Input voltage of act on protection VIN(PROT) 4.0 6.0 V Note) 1. At on-state when drain voltage exceeds the "Short circuit load protection voltage", output current begin to oscillate. 2. When drain voltage exceeds the "drain clamp voltage" output MOS turn on, so drain voltage are clamped before the drain-source junction become breakdown 3. *: State of short circuit laod protection and over heat protection (designed guarantee). |
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