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LC75813T-E 数据表(PDF) 3 Page - ON Semiconductor |
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LC75813T-E 数据表(HTML) 3 Page - ON Semiconductor |
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3 / 28 page ![]() LC75813E, LC75813T www.onsemi.com 3 Note: *1 Excluding the bias voltage generation divider resistors built in the VLCD1 and VLCD2. (See Figure 1.) Parameter Symbol Conditions Ratings Unit min typ max Hysteresis VH CE, CL, DI, INH 0.1 VDD V Input high level current IIH CE, CL, DI, INH: VI = 6.0 V 5.0 μA Input low level current IIL CE, CL, DI, INH: VI = 0 V –5.0 μA VOH1 S1 to S87: IO = –20 μAVLCD – 0.9 Output high level voltage VOH2 COM1 to COM4: IO = –100 μAVLCD – 0.9 V VOH3 P1 to P8: IO = –1 mA VLCD – 0.9 VOL1 S1 to S87: IO = 20 μA0.9 Output low level voltage VOL2 COM1 to COM4: IO = 100 μA0.9 V VOL3 P1 to P8: IO = 1 mA 0.9 VMID1 COM1 to COM4: 1/2 bias, IO =±100 μA 1/2 VLCD – 1/2 VLCD + 0.9 0.9 VMID2 S1 to S87: 1/3 bias, IO =±20 μA 2/3 VLCD – 2/3 VLCD + 0.9 0.9 Output middle level voltage*1VMID3 S1 to S87: 1/3 bias, IO =±20 μA 1/3 VLCD – 1/3 VLCD + V 0.9 0.9 VMID4 COM1 to COM4: 1/3 bias, IO =±100 μA 2/3 VLCD – 2/3 VLCD + 0.9 0.9 VMID5 COM1 to COM4: 1/3 bias, IO =±100 μA 1/3 VLCD – 1/3 VLCD + 0.9 0.9 Oscillator frequency fOSC OSC: ROSC = 39 k, COSC = 1000 pF 30.4 38 45.6 kHz IDD1VDD: Power-saving mode 5 IDD2VDD: VDD = 6.0 V, output open, fOSC = 38 kHz 250 500 Current drain ILCD1VLCD: Power-saving mode 5 μA ILCD2VLCD: VLCD = 6.0 V, output open, 1/2 bias, fOSC = 38 kHz 200 400 ILCD3VLCD: VLCD = 6.0 V, output open, 1/3 bias, fOSC = 38 kHz 120 240 Electrical Characteristics for the Allowable Operating Ranges Figure 1 VSS To the common segument drivers VLCD2 VLCD1 Except these resistors VLCD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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