01.08.2012

LED430/565-04A

1 of 2

LED430/565-04A

TECHNICAL DATA

Dual LED, 5 mm package

GaN, GaP

LED430/565-04A is a bi-color LED, containing a GaN (430 nm) and GaP (565 nm) LED chip die,

which are mounted on a lead frame with a clear epoxy lens.

On forward bias, it emits a power radiation of typical 0.4 mW and 0.2 mW at peak wavelengths of

430 nm and 565 nm.

Specifications

(Unit: mm)

•

Structure:

GaN and GaP

•

Peak Wavelength:

430 and 565 nm

•

Optical Output Power:

0.4 and 0.2 mW

•

Package:

Ø 5 mm clear molding

•

Resin Material:

clear epoxy resin

•

Lead Frame:

soldered

Item

Symbol

Value

Unit

430 nm

565 nm

Power Dissipation

250

130

mW

Forward Current

50

mA

Reverse Voltage

10

V

Operating Temperature

-30 … +85

°C

Storage Temperature

-30 … +100

°C

Soldering Temperature *

240

°C

* must be completed within 3 seconds at 260°C

Electro-Optical Characteristics

Item

Symbol Condition

Min.

Typ.

Max.

Unit

430nm 565nm 430nm 565nm 430nm 565nm

Peak Wavelength

λ

P

418

562

425

565

432

568

nm

Half Width

Δλ

-

50

35

-

nm

Total Radiated Power *

0.2

0.1

0.4

0.2

0.5

0.3

mW

Forward Voltage

-

-

4.0

2.2

5.0

2.4

V

Reverse Current

-

-

-

10

µA

Reverse Current

-

-

100

-

µA

Viewing Half Angle

Θ

1/2

-

±20

-

deg.

*

Note: The above specifications are for reference purpose only and subjected to change without prior notice.