01.08.2012

LED565/660-04A

1 of 2

LED565/660-04A

TECHNICAL DATA

Dual LED, 5 mm package

GaP, DDH AlGaAs

LED565/660-04A is a bi-color LED, containing a GaP (565 nm) and DDH AlGaAs (660 nm) LED

chip die, which are mounted on a lead frame with a clear epoxy lens.

On forward bias, it emits a power radiation of typical 0.2 mW and 4.0 mW at peak wavelengths of

nm and 660 nm.

Specifications

(Unit: mm)

•

Structure:

GaP and DDH AlGaAs

•

Peak Wavelength:

565 and 660 nm

•

Optical Output Power:

0.2 and 4.0 mW

•

Package:

Ø 5 mm clear molding

•

Resin Material:

clear epoxy resin

•

Lead Frame:

soldered

Item

Symbol

Value

Unit

565 nm

660 nm

Power Dissipation

80

75

mW

Forward Current

30

mA

Reverse Voltage

5

V

Operating Temperature

-30 … +85

°C

Storage Temperature

-30 … +100

°C

Soldering Temperature *

240

°C

* must be completed within 3 seconds at 260°C

Electro-Optical Characteristics

Item

Symbol Condition

Min.

Typ.

Max.

Unit

565nm 660nm 565nm 660nm 565nm 660nm

Peak Wavelength

λ

P

562

645

565

655

-

665

nm

Half Width

Δλ

-

50

20

-

nm

Total Radiated Power *

0.1

2.5

0.2

4.0

0.3

6.5

mW

Forward Voltage

-

-

2.2

1.9

2.4

2.3

V

Reverse Current

-

-

-

10

µA

Viewing Half Angle

Θ

1/2

-

±20

-

deg.

*

Note: The above specifications are for reference purpose only and subjected to change without prior notice.