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SDP65N03L 数据表(PDF) 1 Page - SamHop Microelectronics Corp. |
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SDP65N03L 数据表(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 5 page ![]() N-Channel Logic Level E nhancement Mode Field E ffect Transistor ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted) THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Case Thermal R esistance, Junction-to-Ambient R JC R JA 2 62.5 /W C /W C 30 Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS V -Pulsed ID 65 A IDM 195 A Drain-S ource Diode Forward Current IS 65 A Maximum Power Dissipation PD W Operating and S torage Temperature R ange TJ, TS TG -65 to 175 C @ Tc=25 C Derate above 25 C 75 0.5 W/ C Drain Current-Continuous @ TJ=125 C a S G D S DB S E R IE S TO-263(DD-PAK) G S D S DP S E R IE S TO-220 S D G 4 1 P R ODUC T S UMMAR Y V DS S ID 30V 65A 8 @ V GS = 10V 12 @ V GS = 4.5V S DP /B 65N03L F E AT UR E S S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. S amHop Microelectronics C orp. 20 R DS (on) ( m W ) TYP S eptember , 2002 |
类似零件编号 - SDP65N03L |
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类似说明 - SDP65N03L |
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