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STF1016C 数据表(PDF) 3 Page - SamHop Microelectronics Corp.

部件名 STF1016C
功能描述  N-Channel Enhancement Mode Field Effect Transistor
PDF  8 Pages
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制造商  SAMHOP [SamHop Microelectronics Corp.]
网页  http://www.samhop.com.tw
标志 SAMHOP - SamHop Microelectronics Corp.

STF1016C 数据表(HTML) 3 Page - SamHop Microelectronics Corp.

  STF1016C Datasheet HTML 1Page - SamHop Microelectronics Corp. STF1016C Datasheet HTML 2Page - SamHop Microelectronics Corp. STF1016C Datasheet HTML 3Page - SamHop Microelectronics Corp. STF1016C Datasheet HTML 4Page - SamHop Microelectronics Corp. STF1016C Datasheet HTML 5Page - SamHop Microelectronics Corp. STF1016C Datasheet HTML 6Page - SamHop Microelectronics Corp. STF1016C Datasheet HTML 7Page - SamHop Microelectronics Corp. STF1016C Datasheet HTML 8Page - SamHop Microelectronics Corp.  
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STF1016C
Ver 1.0
www.samhop.com.tw
Jul,21,2015
3
Tj( °
C )
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C )
Figure 6. Breakdown Voltage Variation
with Temperature
70
56
42
28
0
0
0.5
1.0
1.5
2.0
2.5
3.0
12
6
0
0
0.8
4.8
4.0
3.2
2.4
1.6
-55 C
54
45
36
27
18
9
1
2.2
1.8
1.6
1.4
1.2
1.0
0
0
100
75
25
50
125
150
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
125 150
100
75
50
25
0
-25
-50
1.15
1.10
1.05
1.00
0.95
0.90
0.85
125 150
100
75
50
25
0
-25
-50
ID=250uA
14
V GS =10V
V GS =4.5V
2.0
V GS =10V
ID=20A
VGS=10V
70
56
42
28
14
0.1
V DS =V GS
ID=250uA
VGS=4.5V
25 C
Tj=125 C
VGS=3V
VGS=3.5V
VGS=4V
18
24
30
V GS =4.5V
ID=19A



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