ATF415 datasheet(1/3 Pages) POSEICO

部件名	ATF415

功能描述	FAST SWITCHING THYRISTOR

PDF	3 Pages

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制造商	POSEICO [Power Semiconductors]

网页	http://www.poseico.com

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FAST SWITCHING THYRISTOR

ATF415

Repetitive voltage up to

1200 V

Mean on-state current

920 A

Surge current

10 kA

FINAL SPECIFICATION

Turn-off time

20 µs

mag 06 - ISSUE : 05

Symbol

Characteristic

Conditions

Tj

[°C]

Value

Unit

BLOCKING

V RRM

Repetitive peak reverse voltage

125

1200

V

V RSM

Non-repetitive peak reverse voltage

125

1300

V

V DRM

Repetitive peak off-state voltage

125

1200

V

I RRM

Repetitive peak reverse current

V=VRRM

125

75

mA

I DRM

Repetitive peak off-state current

V=VDRM

125

75

mA

CONDUCTING

I T (AV)

Mean on-state current

180°sin, 50 Hz, Th=55°C, double side cooled

920

A

I T (AV)

Mean on-state current

180°sin, 1 kHz, Th=55°C, double side cooled

810

A

I TSM

Surge on-state current, non repetitive

sine wave, 10 ms

125

10

kA

I² t

without reverse voltage

500 x1E3

A²s

V T

On-state voltage

On-state current =

1400 A

25

2,2

V

V T(TO)

Threshold voltage

125

1,38

V

r T

On-state slope resistance

125

0,300

mohm

SWITCHING

di/dt

Critical rate of rise of on-state current, min

From 75% VDRM up to 1200 A, gate 10V 5 ohm

125

500

A/µs

dv/dt

Critical rate of rise of off-state voltage, min

Linear ramp up to 75% of VDRM

125

600

V/µs

td

Gate controlled delay time, typical

VD=200V, gate source 20V, 10 ohm , tr=.5 µs

25

0,85

µs

tq

Circuit commutated turn-off time

di/dt =

60

A/µs, I= 1000 A

I =

1000

A

125

20

µs

dV/dt =

200 V/µs , up to

80%

VDRM

Q rr

Reverse recovery charge

di/dt =

60

A/µs, I= 1000 A

I =

1000

A

125

200

µC

I rr

Peak reverse recovery current

VR =

50

V

150

A

I H

Holding current, typical

VD=5V, gate open circuit

25

mA

I L

Latching current, typical

VD=12V, tp=30µs

25

mA

GATE

V GT

Gate trigger voltage

VD=5V

25

3,5

V

I GT

Gate trigger current

VD=5V

25

350

mA

V GD

Non-trigger gate voltage, min.

VD=VDRM

125

0,25

V

V FGM

Peak gate voltage (forward)

25

30

V

I FGM

Peak gate current

25

10

A

V RGM

Peak gate voltage (reverse)

25

5

V

P GM

Peak gate power dissipation

Pulse width 100 µs

25

150

W

P G(AV)

Average gate power dissipation

25

3

W

MOUNTING

R th(j-h)

Thermal impedance, DC

Junction to heatsink, double side cooled

37

°C/kW

T j

Operating junction temperature

-30 / 125

°C

F

Mounting force

11.0 / 13.0

kN

Mass

320

g

tq code

D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs

ORDERING INFORMATION

: ATF415 S 12 B

tq code

M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs

standard specification

VDRM&VRRM/100

T 60 µs U 70 µs W 80 µs X 100µs Y 150µs

POSEICO SPA

POwer SEmiconductors Italian COrporation

POSEICO

POSEICO SPA

Via N. Lorenzi 8, 16152 Genova - ITALY

Tel. +39 010 6556234 - Fax +39 010 6557519

Sales Office:

Tel. +39 010 6556775 - Fax +39 010 6445141

类似零件编号 - ATF415

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