Thermopile Infrared Sensor

TP339

Microelectronics Dept. 2000.05

2 / 7

ROITHNER LASERTECHNIK

Tel: 43-1-5865243-0

Fax: 43-1-5865243-44

http://www.roithner-laser.com

▓ Electrical Characteristics

Parameter

Condition

Min.

Typ.

Max.

Unit

Thermopile

Number of thermojunctions

---

116

---

Chip size

---

1740*1740

---

µm

2

Active region size

Interference

layer

---

Diameter

545

---

µm

Thickness of substrate

Silicon-

substrate

600

625

650

µ

m

Resistance of thermopile

25 °C

50

65

80

KOhm

Sensitivity

With 5-14 µm

filter

70

85

100

V/W

Detecctivity

1.0*10

8

1.3*10

8

1.7*10

Time constant

---

16

---

ms

Noise voltage

28

32

36

nV/Hz

1/2

NEP

0.28

0.36

0.48

nW/Hz

1/2

Temperature range

Operation

-20

---

100

°C

Temperature reference resistor

---

Resistance (1)

25 °C

29.1

30.0

30.9

KOhm

Resistance (1)

25 °C

97

100

103

KOhm

value (1)

0

3773

3811

3849

K

value (2)

0

3950

3970

3990

K

Measured at 1 Hz chopper frequency, within spectral range 5-14 µm, using a blackbody

radiator of 500 K temperature.

Note : Thermistor should be operated under 1 mA.