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TMBF310 数据表(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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TMBF310 数据表(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd |
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1 / 2 page ![]() TMBF310 S INGLE P HASE 3.0 AMPS. GLASS PASSIVATED B RIDGE R ECTIFIERS TMBF - + .024(.60) .008(.20) .008(.20) .276(7.0) .035(.95) .006(.17) .299(7.6) .315(8.0) .189(4.8) .205(5.2) .059(1.50) .012(.30) .044(1.15) .011(.28) .064(1.4) .032(0.8) .244(6.2) Max .331(8.4) .351(8.9) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20% Type Number SYM BOL TMBF310 units Maximum Recurrent Peak Reverse Voltage VRRM 1000 V Maximum RMS Voltage VRMS 700 V Maximum DC blocking Voltage VDC 1000 V Maximum Average Forward rectified Current IF(AV) 3.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 95 A Maximum Instantaneous Forward Voltage at 3.0A DC VF 1.1 V Maximum DC Reverse Current @TA =25°C at rated DC blocking voltage @TA =125°C IR 5.0 100.0 μA I2t Rating for Fusing (t﹤8.3ms) I2t 37.45 A2Sec Typical Junction Capacitance Per Leg (Note1) CJ 50 pF Typical Thermal Resistance (Note2) RJA 85 °C /W RJC 22 Storage Temperature TSTG -55 to +150 °C Operating Junction Temperature TJ -55 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 2. Thermal Resistance from Junction to Ambient mounted on P.C.B with 0.38×0.38″ (15×15mm) copper pads FEATURE .Glass passivated junction. .Ideal for printed circuit board. .Reliable low cost construction utilizing molded plastic technique. .High surge current capability. .High temperature soldering guaranteed: 250℃/10 seconds at terminals. .Small size, simple installation. MECHANICAL DATA .Case: Molded plastic .Epoxy: UL 94V-0 rate flame retardant .Lead: MIL-STD- 202E, Method 208 guaranteed .Polarity: As marked (Halogen free) |
类似零件编号 - TMBF310 |
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类似说明 - TMBF310 |
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