ESJC37-12

300mA 12kV 100nS

High Voltage Silicon Rectifier Diode

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GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2017-10 1 / 2

INTRODUCE:

HVGT high voltage silicon rectifier diodes is made of

high quality Silicon chip and high reliability epoxy

resin sealing structure, and through professional

testing equipment inspection qualified

after to

customers.

FEATURES:

1. High reliability design.

2. Low VF.

3. High frequency.

4. Conform to RoHS and SGS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. General purpose high voltage rectifier.

3. Rectification for X-ray generator high voltage

power supply.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.65 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-415

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

Repetitive Peak Renerse Voltage

12

kV

Non-Repetitive Peak Renerse Voltage

--

kV

Average Forward Current Maximum

300

mA

--

mA

Non-Repetitive Forward Surge Current

15

A

Junction Temperature

125

°C

Allowable Operation Case Temperature

Tc

-40~+125

°C

Storage Temperature

-40~+125

°C

Items

Symbols

Condition

Data value

Units

Maximum Forward Voltage Drop

30

V

Maximum Reverse Current

2.0

uA

10

uA

Maximum Reverse Recovery Time

100

nS

Junction Capacitance

15

pF