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MSK640 数据表(PDF) 2 Page - M.S. Kennedy Corporation |
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MSK640 数据表(HTML) 2 Page - M.S. Kennedy Corporation |
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2 / 6 page ![]() +75V 10.5°C/W 250mA 1 2 3 4 5 6 Group A Subgroup 1 2 3 1 2,3 1 2,3 - - 4 4 4 4 4 - - - 4 VIN=N/C VIN=N/C VIN=N/C VIN=0.7V Derated Performance f=10KHz f=10KHz VIN=2VPP; f=10KHz VOUT=40VPP VOUT=40VPP VOUT=20VPP VOUT=20VPP f=1KHz f=10KHz; 5VPP≤VOUT≤50Vpp -65°C to +150°C 300°C -40°C to +85°C -55°C to +125°C 175°C ABSOLUTE MAXIMUM RATINGS TST TLD TC TJ Storage Temperature Range Lead Temperature Range (10 Seconds) Case Operating Temperature MSK640 MSK640B Junction Temperature Supply Voltage Thermal Resistance (Junction to Case) Peak Output Current +VCC θJC IOUT RIN=215Ω, CIN=100pF, CLOAD=8.5pF, RL=∞, unless otherwise specified (See Figure 1). Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only. Industrial grade devices shall be tested to subgroups 1 and 4 unless otherwise specified. Military grade devices ('B' suffix) shall be 100% tested to subgroups 1,2,3 and 4. Subgroup 5 and 6 testing available upon request. Subgroup 1,4 TA=TC=+25°C Subgroup 2,5 TA=TC=+125°C Subgroup 3,6 TA=TC=-55°C Typ. 40 55 35 1.55 - 30 - 10 60 58 2 12.5 2.1 2 25 175 - 0.5 Typ. 40 55 35 1.55 - 30 30 10 60 58 2 12.5 2.1 2 25 175 - 0.5 STATIC Power Supply Current Input Bias Voltage Output Offset Voltage Input Capacitance Power Supply Range DYNAMIC CHARACTERISTICS Output Voltage High Output Voltage Low Voltage Gain Rise Time Fall Time Overshoot (Adjustable) -3dB Bandwidth Low Frequency Tilt Voltage Linearity Error Min. - - - 1.4 1.35 28 26 - 40 55 - 10.5 - - - 130 - - Max. 45 65 45 1.7 1.8 32 34 - 75 - 5 14.5 2.9 2.9 - - 1.5 5 Min. - - - 1.3 - 27 - - 40 55 - 10 - - - 125 - - Max. 50 - - 1.8 - 33 - - 70 - 5 15 3 3 - - 1.5 5 MSK 640B MSK 640 Parameter Test Conditions ELECTRICAL SPECIFICATIONS +Vcc=+60V Unless Otherwise Specified 2 2 2 2 1 mA mA mA V V V V pF V V V V/V nS nS % MHz V % Units NOTES: Rev. B 8/00 2 |
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