17.08.2010

led405_30m32.doc

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being designed for sensing devices.

On forward bias it emits a spectral band of radiation, which peaks at 405 nm.

Features

Outer dimensions Unit:mm

1) High Power

2) High Reliability

Specifications

1) Product Name

LED Lamp

2) Type No.

LED405-30M32

3) Chip Spec.

(1) Material

InGaN

(2) Peak Wavelength 405nm

4) Package

(1) Type

TO-18 stem

(2) Lens

Ball Glass Lens

Absolute Maximum Ratings

Item

Symbol

Maximum Rated Value

Unit

Ambient Temperature

Power Dissipation

120

mW

Ta=25°C

Forward Current

30

mA

Ta=25°C

Pulse Forward Current

100

mA

Ta=25°C

Reverse Voltage

5

V

Ta=25°C

Operating Temperature

-30 ~ +85

°C

Storage Temperature

-30 ~ +100

°C

Soldering Temperature

260

°C

‡

Pulse Forward Current condition: Duty=1% and Pulse Width=10us.

‡

Soldering condition: Soldering condition must be completed within 3 seconds at 260°

Electro-Optical Characteristics

Item

Symbol

Condition

Minimum

Typical

Maximum

Unit

Forward Voltage

3.8

4.3

V

Reverse Current

10

uA

Total Radiated Power

0.3

0.8

mW

Brightness

10

20

mcd

Radiant Intensity

5

15

mW/sr

Peak Wavelength

395

405

415

nm

Half Width

Δλ

15

nm

Viewing Half Angle

±10

deg.

‡

Total Radiated Power is measured by Photodyne #500

‡

Radiant Intensity is measured by Tektronix J-6512