2CL2FD

200mA 4.0kV 100nS--High Voltage Silicon Rectifier Diode

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2017-08 1 / 2

INTRODUCE:

HVGT high voltage silicon rectifier diodes is

made of high quality glass passivated chip and

high reliability epoxy resin sealing structure,

and through professional testing equipment

inspection qualified after to customers.

FEATURES:

1. High reliability design.

2. High voltage design.

3. High frequency .

4. Conform to RoHS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Other.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.28 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-308

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value Units

Repetitive Peak Renerse Voltage

4.0

kV

Average Forward Current Maximum

200

mA

--

mA

Suege Current

10

A

Junction Temperature

-40~+125

°C

Allowable Operation Case Temperature

Tc

125

°C

Storage Temperature

-40~+125

°C

Items

Symbols

Condition

Data value Units

Maximum Forward Voltage Drop

13

V

Maximum Reverse Current

2.0

uA

20

uA

Maximum Reverse Recovery Time

100

nS

Junction Capacitance

15

pF