BAS416 datasheet(3/8 Pages) PHILIPS

部件名	BAS416

功能描述	Low-leakage diode

PDF	8 Pages

Scroll/Zoom	100%

制造商	PHILIPS [NXP Semiconductors]

网页	http://www.nxp.com

标志

3 / 8 page

2004 Jan 26

Philips Semiconductors

Product speciﬁcation

Low-leakage diode

BAS416

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

THERMAL CHARACTERISTICS

Note

1. Refer to SOD323 (SC-76) standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

forward voltage

see Fig.3

IF =1mA

−

0.9

IF =10mA

−

IF =50mA

−

1.1

IF = 150 mA

−

1.25

reverse current

see Fig.5

VR = 75 V

0.003

VR = 75 V; Tj = 150 °C

diode capacitance

VR = 0; f = 1 MHz; see Fig.6

−

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω;

measured at IR = 1 mA; see Fig.7

0.8

µs

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

450

K/W

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