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S3MBF 数据表(PDF) 1 Page - Gaomi Xinghe Electronics Co., Ltd. |
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S3MBF 数据表(HTML) 1 Page - Gaomi Xinghe Electronics Co., Ltd. |
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1 / 2 page ![]() S3KBF S3MBF S3GBF S3JBF S3ABF S3BBF S3DBF BF AB S3 F THRU S3M Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A Ratings at 25 ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. °C Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Instantaneous Forward Voltage at 3 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at Ta = 65 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C 1) Typical Junction Capacitance 2) VRRM VRMS VDC IF(AV) IFSM VF IR 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 3 100 1.2 5 250 53 13 47 -55 ~ +150 A A V μA pF °C Maximum Ratings and Electrical characteristics Typical Thermal Resistance RθJA Measured at 1 MHz and applied reverse voltage of 4 V D.C 2 )Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted 1 ) °C/W Cj T , T j stg Symbols Units 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM 1 MECHANICAL DATA • • Terminals: Solderable per MIL-STD-750, Method 2026 • pprox. Weight: 57mg / 0.002oz Case: SMBF A FEATURES For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives • SMBF 0.201(5.10) 0.217(5.50) 0.166(4.20) 0.174(4.40) 0.137(3.50) 0.145(3.70) 0.075(1.90) 0.087(2.20) Dimensions in inches and (millimeters) Cathode Band Top View 0.055(1.40) 0.043(1.10) 0.012(0.30) 0.006(0.15) 0.047(1.20) 0.028(0.70) XH |
类似零件编号 - S3MBF |
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类似说明 - S3MBF |
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