MAXIMUM RATINGS: (TA=25°C)

SYMBOL

CMPT4401

CMPT4403

UNITS

Collector-Base Voltage

VCBO

60

40

V

Collector-Emitter Voltage

VCEO

40

40

V

Emitter-Base Voltage

VEBO

6.0

5.0

V

Continuous Collector Current

IC

600

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMPT4401

CMPT4403

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=35V, VEB=0.4V

0.1

0.1

µA

IBEV

VCE=35V, VEB=0.4V

0.1

0.1

µA

BVCBO

IC=100µA

60

40

V

BVCEO

IC=1.0mA

40

40

V

BVEBO

IE=100µA

6.0

5.0

V

VCE(SAT) IC=150mA, IB=15mA

0.40

0.40

V

VCE(SAT) IC=500mA, IB=50mA

0.75

0.75

V

VBE(SAT) IC=150mA, IB=15mA

0.75

0.95

0.75

0.95

V

VBE(SAT) IC=500mA, IB=50mA

1.2

1.3

V

hFE

VCE=1.0V, IC=0.1mA

20

30

hFE

VCE=1.0V, IC=1.0mA

40

60

hFE

VCE=1.0V, IC=10mA

80

100

CMPT4401 NPN

CMPT4403 PNP

COMPLEMENTARY

SILICON TRANSISTORS

SOT-23 CASE

Central

Semiconductor Corp.

TM

R4 (26-September 2002)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT4401,

CMPT4403 types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for small signal general

purpose amplifier and switching applications.

MARKING CODES:

CMPT4401: C2X

CMPT4403: C2T