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LED545-01 数据表(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED545-01 数据表(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 4 page ![]() www.roithner-laser.com 1 LED545-01 rev 2.0 07.06.2016 Description LED545-01 contains a InGaN LED mounted on a lead frame hermetically sealed with a clear epoxy lens. On forward bias, it emits a power radiation of typical 2 mW at a peak wavelength at 545 nm. Maximum Ratings (T CASE =25°C) Parameter Symbol Values Min. Max. Unit Power Dissipation PD 180 mW Forward Current IF 50 mA Pulse Forward Current *1 IFP 100 mA Reverse Voltage VF 5 V Thermal Resistance RTHJA 330 K/W Junction Temperature TJ 100 °C Operating Temperature TCASE - 40 + 85 °C Storage Temperature TSTG - 40 + 100 °C Lead Solder Temperature *2 TSLD + 265 °C *1 duty=1%, pulse width = 10 µs *2 must be completed within 3 seconds Electro-Optical Characteristics (T CASE =25°C) *1 measured by S3584-08 *2 measured by Tektronix J-6512 Parameter Symbol Conditions Values Min. Typ. Max. Unit Peak Wavelength λP IF=20mA 535 545 555 nm Half Width ∆λ IF=20mA 36 nm Dominant Wavelength λD IF=20mA Forward Voltage VF IF=20mA 3.2 V Radiated Power *1 PO IF=20mA 2 mW Radiant Intensity *2 IE IF=20mA 9.3 mW/sr Brigthness IV IF=20mA 7 cd Viewing Angle φ IF=20mA 16 deg. |
类似零件编号 - LED545-01 |
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类似说明 - LED545-01 |
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