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QL67F6S Series

Description

QL76F6S series are MOCVD grown band Gain-Guided type InGaAlP Laser Diode with quantum

well structure. They are emitting at typical 670 nm with rated output power of 10 mW CW at room

temperature. The 5.6 mm TO package includes a cap and flat window, and contains a built in

monitor PD.

Maximum Ratings

Parameter

Symbol

Values

Unit

Min.

Max.

Optical Output Power

12

mW

Laser Diode Reverse Voltage

2

V

Photo Diode Reverse Voltage

30

V

Operating Temperature

-10

+60

°C

Storage Temperature

-40

+85

°C

Soldering Temperature

°C

Parameter

Symbol

Values

Unit

Min.

Typ.

Max.

Peak Wavelength

λ

P

660

670

680

nm

Optical Output Power

-

10

-

mW

Threshold Current

-

40

60

mA

Forward Current

-

50

70

mA

Forward Voltage

-

2.3

2.6

V

Beam Divergence

ӨII

7

8

11

deg.

Beam Divergence

Ө┴

24

32

35

deg.

Beam Angle

ΔӨII

±1.5

deg.

Beam Angle

ΔӨ┴

±2.5

deg.

Positional Accuracy

ΔX, ΔY, ΔZ

-

-

±60

µm

Mode Structure

SM

-

Monitor Current

0.1

0.3

0.5

mA

rev 2.0 13.11.2015