2015-12-23

2

Version 1.3

BPX 65

Parameter

Symbol

Values

Unit

Operating and storage temperature range

T

-40 ... 125

°C

Reverse voltage

V

R

20

V

Reverse voltage

(t < 2 min)

V

R

50

V

Total Power dissipation

P

tot

250

mW

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

2000

V

Parameter

Symbol

Values

Unit

Spectral sensitivity

(V

(typ)

S

10 (≥ 5.5)

nA/Ix

Photocurrent

(E

(typ (min))

I

P

10 (≥ 5.5)

µA

Wavelength of max. sensitivity

(typ)

λ

S max

850

nm

Spectral range of sensitivity

(typ)

(typ) 350

... 1100

nm

Radiant sensitive area

(typ)

A

1.00

mm

2

Dimensions of radiant sensitive area

(typ)

L x W

1 x 1

mm x

mm

Half angle

(typ)

ϕ

± 40

°

Dark current

(V

(typ (max)) I

R

1 (≤ 5)

nA

Spectral sensitivity of the chip

(λ = 850 nm)

(typ)

S

λ typ

0.55

A / W

Quantum yield of the chip

(typ)

η

0.80

Electro

ns

/Photon

Open-circuit voltage

(E

(typ (min))

V

O

320 (≥ 270)

mV

Short-circuit current

(typ)

I

SC

10

µA

Rise and fall time

(typ)

0.012

µs

Forward voltage

(I

(typ)

1.3

V

Capacitance

(V

(typ)

C

0

11

pF