10-42
RF2637
Rev A3 040511
Absolute Maximum Ratings
Parameter
Value
Unit
Supply Voltage
-0.5 to +7.0
VDC
Control Voltage
-0.5 to +5.0
VDC
Input RF Power
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25°C, 85MHz, VCC=3.0V, ZS =500Ω,
ZL=500Ω, 500Ω External Input Terminating
Resistor, 500
Ω External Output Terminating
Resistor (Effective ZS=333Ω, Effective
ZL=250Ω) (See Application Example)
Frequency Range
12 to 385
MHz
Maximum Gain
+40
+51
+65
dB
VGC=2.5V, 85MHz
Minimum Gain
-65
-55
-40
dB
VGC=0.1V, 85MHz
Maximum Gain
+35
+45
+55
dB
VGC=2.5V, 385MHz
Minimum Gain
-68
-58
-48
dB
VGC=0.1V, 385MHz
Gain Slope
57
dB/V
Note 1
Gain Control Voltage Range
0 to 2.5
VDC
Source impedance of 4.7k
Ω
Gain Control Input Impedance
30
k
Ω
Noise Figure
5
7.2
dB
At maximum gain and 85MHz
Input IP3
-46
-40
dBm
At +40dB gain, referenced to 500
Ω
-2
dBm
At minimum gain, referenced to 500
Ω
Stability (Max VSWR)
10:1
Spurious<-70dBm
IF Input
Input Impedance
1
k
Ω
CDMA, differential
Power Supply
Voltage
2.7 to 3.4
V
Current Consumption
6
10
15
mA
Minimum gain, VCC=3.0V
7
11.5
15
mA
Maximum gain, VCC=3.0V
Thermal
Thermal Resistance
150
°C/W
Theta J-Ref 85°C
Maximum Junction Temperature
90
°C
Ref 85°C
Note 1: Measured between a gain control voltage of 1.0V to 1.5V.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
