| 制造商 |
部件名 |
数据表 Date Size |
功能描述 |
Rohs Pb Free Lifecycle |
网页 |
 NXP Semiconductors
|
BLS2731-10 TRAY
|
|
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 2700 - 3100 MHz; Load power: 12.5 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width:
|
compliant no active |
|
|
BLS2731-110 TRAY
|
|
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 110 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 1
|
compliant no active |
|
|
BLS2731-20 TRAY
|
|
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 25 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 1
|
compliant no active |
|
|
BLS2731-50 TRAY
|
|
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 60 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 10
|
compliant no active |
|
|
BLS2933-100,112
|
|
BLS2933-100
|
compliant
obsolete |
|
|
BLS3135-10 TRAY
|
|
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 10 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 10
|
unknown no active |
|
|
BLS3135-20 TRAY
|
|
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 20 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 10
|
compliant no active |
|
|
BLS3135-50 TRAY
|
|
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 50 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 10
|
compliant no active |
|
|
BLS3135-65 TRAY
|
|
Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 65 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 10
|
compliant no active |
|
|
BLS6G2731P-200,117
|
|
LDMOS S-Band radar pallet amplifier, SOM038 Package, Standard Marking, Tray Pack, Multiple
|
unknown unknown preview |
|
|
BLS6G2731S-130,112
|
|
BLS6G2731S-130
|
compliant
transferred |
|
|
BLS6G2735L-30,112
|
|
BLS6G2735L-30
|
compliant
transferred |
|
|
BLS6G2735LS-30,112
|
|
BLS6G2735LS-30
|
compliant
transferred |
|
|
BLS6G2933S-130,112
|
|
BLS6G2933S-130
|
compliant
transferred |
|
|
BLS6G3135S-120,112
|
|
BLS6G3135S-120
|
compliant
transferred |
|
|
BLS6G3135S-20,112
|
|
BLS6G3135S-20
|
compliant
transferred |
|
|
BLS7G2325L-105,112
|
|
BLS7G2325L-105
|
compliant
transferred |
|
|
BLS7G2729L-350P,11
|
|
BLS7G2729L-350P
|
compliant
transferred |
|
|
BLS7G2729LS-350P,1
|
|
BLS7G2729LS-350P
|
compliant
transferred |
|
|
BLS7G2730L-200PU
|
|
BLS7G2730L-200P
|
compliant
active |
|