| 制造商 | 部件名 | 数据表 | 功能描述 |
 Unisonic Technologies |
81N17L-R-AB3-I-R
|
204Kb/15P
|
VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME
|
| Search Partnumber :
Start with "1N17L-R-AB3-I-R" -
Total : 110 ( 1/6 Page) |
 New Jersey Semi-Conduct... |
1N173BA
|
80Kb/1P |
1WZENER DIODE
|
 List of Unclassifed Man... |
1N1763A
|
2Mb/6P |
GERMANIUM PNP TRANSISTORS
|
|
1N1764A
|
2Mb/6P |
GERMANIUM PNP TRANSISTORS
|
 New Jersey Semi-Conduct... |
1N1766
|
71Kb/1P |
Ref/Reg Diode
|
|
1N1783
|
70Kb/1P |
Ref/Reg Diode
|
|
1N1783A
|
63Kb/1P |
Ref/Reg Diode
|
 Rectron Semiconductor |
1N17
|
262Kb/3P |
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere
|
 Micro Commercial Compon... |
1N17
|
679Kb/3P |
1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts
|
 GOOD-ARK Electronics |
1N17
|
167Kb/2P |
Schottky Barrier Rectifiers Reverse Voltage 20 to 40 Volts Forward Current 1.0 Ampere
|
 Jinan Jingheng (Group) ... |
1N17
|
53Kb/2P |
SCHOTTKY BARRIER RECTIFIER
|
 Microsemi Corporation |
1N100
|
62Kb/1P |
Optimized for Radio Frequency Response
|
 List of Unclassifed Man... |
1N100
|
70Kb/1P |
GOLD BONDED GERMANIUM DIODE
|
|
1N100
|
2Mb/78P |
GOLD BONDED DIODES
|
 American Microsemicondu... |
1N100
|
442Kb/1P |
MEDIUM AND LOW VOLTAGE GERMANIUM DIODES
|
 Microsemi Corporation |
1N100A
|
62Kb/1P |
Optimized for Radio Frequency Response
|
 List of Unclassifed Man... |
1N100A
|
2Mb/78P |
GOLD BONDED DIODES
|
|
1N100A
|
41Kb/1P |
JEDEC DO-7 PACKAGE
|
 New Jersey Semi-Conduct... |
1N100A
|
136Kb/1P |
GERMANIUM DIODES
|
|
1N100A
|
71Kb/1P |
germanium signal diode
|