| 制造商 | 部件名 | 数据表 | 功能描述 |
 Unisonic Technologies |
81N19L-R-AB3-I-R
|
204Kb/15P
|
VOLTAGE DETECTORS WITH BUILT-IN DELAY TIME
|
| Search Partnumber :
Start with "1N19L-R-AB3-I-R" -
Total : 109 ( 1/6 Page) |
 List of Unclassifed Man... |
1N191
|
2Mb/78P |
GOLD BONDED DIODES
|
|
1N191
|
120Kb/1P |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA)
|
 New Jersey Semi-Conduct... |
1N191
|
79Kb/1P |
SWITCHING DIODE
|
 List of Unclassifed Man... |
1N192
|
2Mb/78P |
GOLD BONDED DIODES
|
|
1N194
|
266Kb/6P |
silicon diode
|
|
1N195
|
2Mb/78P |
GOLD BONDED DIODES
|
|
1N195
|
266Kb/6P |
silicon diode
|
 New Jersey Semi-Conduct... |
1N1956B
|
71Kb/1P |
Ref/Reg Diode
|
 List of Unclassifed Man... |
1N196
|
266Kb/6P |
silicon diode
|
|
1N198
|
2Mb/78P |
GOLD BONDED DIODES
|
 New Jersey Semi-Conduct... |
1N198
|
72Kb/1P |
GERMANJUM DIODE
|
 American Microsemicondu... |
1N198
|
442Kb/1P |
MEDIUM AND LOW VOLTAGE GERMANIUM DIODES
|
 List of Unclassifed Man... |
1N198A
|
2Mb/78P |
GOLD BONDED DIODES
|
|
1N198B
|
2Mb/78P |
GOLD BONDED DIODES
|
 Microsemi Corporation |
1N100
|
62Kb/1P |
Optimized for Radio Frequency Response
|
 List of Unclassifed Man... |
1N100
|
70Kb/1P |
GOLD BONDED GERMANIUM DIODE
|
|
1N100
|
2Mb/78P |
GOLD BONDED DIODES
|
 American Microsemicondu... |
1N100
|
442Kb/1P |
MEDIUM AND LOW VOLTAGE GERMANIUM DIODES
|
 Microsemi Corporation |
1N100A
|
62Kb/1P |
Optimized for Radio Frequency Response
|