| 制造商 | 部件名 | 数据表 | 功能描述 |
 NEC |
2SC5337
|
59Kb/8P
|
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
|
 Renesas Technology Corp |
2SC5337
|
104Kb/7P
|
NPN Silicon RF Transistor for High-Frequency
|
 California Eastern Labs |
2SC5337
|
877Kb/6P
|
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
 Renesas Technology Corp |
2SC5337-A
|
137Kb/2P
|
RF & Microwave device
|
|
2SC5337-AZ
|
104Kb/7P
|
NPN Silicon RF Transistor for High-Frequency
|
 California Eastern Labs |
2SC5337-AZ
|
877Kb/6P
|
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
 Renesas Technology Corp |
2SC5337-T1
|
104Kb/7P
|
NPN Silicon RF Transistor for High-Frequency
|
 California Eastern Labs |
2SC5337-T1
|
877Kb/6P
|
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
 Renesas Technology Corp |
2SC5337-T1-AZ
|
104Kb/7P
|
NPN Silicon RF Transistor for High-Frequency
|
 California Eastern Labs |
2SC5337-T1-AZ
|
877Kb/6P
|
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|
 Renesas Technology Corp |
2SC5337
|
99Kb/7P
|
NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold
|