| 制造商 | 部件名 | 数据表 | 功能描述 |
 MTRONPTI |
M7R65FDJ-R
|
429Kb/2P
|
9x14 mm, 5.0 or 3.3 Volt, HCMOS/TTL, Clock Oscillator
|
|
M7S65FDJ-R
|
286Kb/2P
|
9x14 mm, 5.0 or 3.3 Volt, HCMOS/TTL, Clock Oscillator
|
|
M8S65FDJ-R
|
286Kb/2P
|
9x14 mm, 5.0 or 3.3 Volt, HCMOS/TTL, Clock Oscillator
|
|
M8S65FDJ-R
|
429Kb/2P
|
9x14 mm, 5.0 or 3.3 Volt, HCMOS/TTL, Clock Oscillator
|
| Search Partnumber :
Start with "65FDJ-R" -
Total : 9 ( 1/1 Page) |
 Infineon Technologies A... |
65F6041
|
1Mb/15P |
extremely low losses due to very low fom rdson qg and eoss
2011-11-13 revision:2.0 |
|
65F6080
|
1Mb/12P |
650V CoolMOS CFD Power Transistor
Rev. 2.0, 2011-02-02 |
|
65F6080A
|
1Mb/14P |
Metal Oxide Semiconductor Field Effect Transistor
2012-04-02 revision:2.1 |
|
65F6110
|
3Mb/20P |
Metal Oxide Semiconductor Field Effect Transistor
2011-09-26 revision:2.6 |
|
65F6150
|
3Mb/20P |
Metal Oxide Semiconductor Field Effect Transistor
2011-11-16 revision:2.0 |
|
65F6190
|
3Mb/20P |
Metal Oxide Semiconductor Field Effect Transistor
2011-09-26 revision:2.7 |
 VBsemi Electronics Co.,... |
65F6310
|
1Mb/8P |
N-Channel 650 V (D-S) MOSFET
|
|
65F6420
|
1Mb/8P |
N-Channel 650 V (D-S) MOSFET
|
 Infineon Technologies A... |
65F6660
|
4Mb/21P |
Metal Oxide Semiconductor Field Effect Transistor
2011-09-27 revision:2.5 |