| 制造商 | 部件名 | 数据表 | 功能描述 |
 Micron Technology |
EDB8164B4PK-1DATF-R
|
2Mb/152P
|
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
Rev. F 08 /16 EN
|
|
EDB8164B4PR-1DATF-R
|
2Mb/152P
|
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
Rev. F 08 /16 EN
|
|
EDB8164B4PT-1DATF-R
|
2Mb/152P
|
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
Rev. F 08 /16 EN
|
|
EDBA164B4PK-1DATF-R
|
2Mb/152P
|
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
Rev. F 08 /16 EN
|
|
EDBA164B4PR-1DATF-R
|
2Mb/152P
|
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
Rev. F 08 /16 EN
|
|
EDBA164B4PT-1DATF-R
|
2Mb/152P
|
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
Rev. F 08 /16 EN
|
| Search Partnumber :
Start with "ATF-R" -
Total : 100 ( 1/5 Page) |
 Agilent(Hewlett-Packard... |
ATF-10100
|
51Kb/4P |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
|
ATF-10100-GP3
|
51Kb/4P |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
|
ATF-10136
|
46Kb/3P |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
|
ATF-10136-STR
|
46Kb/3P |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
|
ATF-10136-TR1
|
46Kb/3P |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
|
ATF-10236
|
47Kb/3P |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
|
ATF-10236-STR
|
47Kb/3P |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
|
ATF-10236-TR1
|
47Kb/3P |
0.5-12 GHz Low Noise Gallium Arsenide FET
|
|
ATF-13100
|
43Kb/3P |
2-18 GHz Low Noise Gallium Arsenide FET
|
|
ATF-13100-GP3
|
43Kb/3P |
2-18 GHz Low Noise Gallium Arsenide FET
|
|
ATF-13284
|
132Kb/2P |
1-16 GHz Low Noise Gallium Arsenide FET
|
|
ATF-13284-STR
|
132Kb/2P |
1-16 GHz Low Noise Gallium Arsenide FET
|
|
ATF-13284-TR1
|
132Kb/2P |
1-16 GHz Low Noise Gallium Arsenide FET
|
|
ATF-13284-TR2
|
132Kb/2P |
1-16 GHz Low Noise Gallium Arsenide FET
|