| 制造商 | 部件名 | 数据表 | 功能描述 |
 NXP Semiconductors |
BAS29
|
90Kb/12P
|
General purpose controlled avalanche double diodes
1999 May 21
|
|
BAS29
|
138Kb/9P
|
General purpose controlled avalanche (double) diodes
2003 Mar 20
|
 ON Semiconductor |
BAS29
|
161Kb/4P
|
Small Signal Diode
Rev. A
|
 Jinan Gude Electronic D... |
BAS29
|
96Kb/1P
|
SURFACE MOUNT SWITCHING DIODES
|
 Fairchild Semiconductor |
BAS29
|
58Kb/2P
|
Small Signal Diode
|
 TRANSYS Electronics Lim... |
BAS29
|
53Kb/2P
|
SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE
|
 Nexperia B.V. All right... |
BAS29
|
331Kb/10P
|
General purpose controlled avalanche (double) diodes
2003 Mar 20
|
 Goodwork Semiconductor ... |
BAS29
|
393Kb/3P
|
Silicon Epitaxial Planar Switching Diodes
|
 Guangdong Kexin Industr... |
BAS29
|
79Kb/4P
|
General Purpose Controlled Avalanche Diodes
|
|
BAS29
|
1Mb/4P
|
Switching Diodes
|
 SHIKUES Electronics |
BAS29
|
412Kb/3P
|
Silicon Epitaxial Planar Switching Diodes
|
 Guangdong Kexin Industr... |
BAS29-3
|
1Mb/4P
|
Switching Diodes
|
 Diodes Incorporated |
BAS299
|
218Kb/5P
|
HIGH SPEED HIGH CURRENT QUAD SWITCHING DIODE
March 2019 Rev.1 - 2
|
|
BAS299-7
|
218Kb/5P
|
HIGH SPEED HIGH CURRENT QUAD SWITCHING DIODE
March 2019 Rev.1 - 2
|
 Cystech Electonics Corp... |
BAS299N3
|
347Kb/7P
|
High ?뱒peed double diode
|
|
BAS299N3-0-T1-G
|
347Kb/7P
|
High ?뱒peed double diode
|
 NXP Semiconductors |
BAS29_31_35
|
138Kb/9P
|
General purpose controlled avalanche (double) diodes
2003 Mar 20
|