| 制造商 | 部件名 | 数据表 | 功能描述 |
 GS Yuasa Battery Sales ... |
GS-896
|
722Kb/1P
|
Capacity (20-hour) 26Ah
|
| Search Partnumber :
Start with "GS-896" -
Total : 107 ( 1/6 Page) |
 GS Yuasa Battery Sales ... |
GS-895
|
539Kb/1P |
Capacity (20-hour) 26Ah
|
 Roithner LaserTechnik G... |
GS-8020A
|
493Kb/1P |
laser diode collimator
|
|
GS-8020B
|
518Kb/1P |
laser diode collimator, utilizing 3 glass lens, featuring M9x0.5 fine pitched thread, O-Ring sealing, 8 mm focal length, and AR coating suitable for Blue laser diodes
|
 Keysight Technologies |
GS-8800
|
2Mb/9P |
Wireless Communication Design Verification (DV) and Conformance Test (CT) System
|
 Agilent(Hewlett-Packard... |
GS-8830
|
635Kb/6P |
RF Design Verification Test Systems
|
 Panasonic Semiconductor |
GS-8M
|
301Kb/4P |
Compact Inductive Proximity Sensor
|
|
GS-8S
|
301Kb/4P |
Compact Inductive Proximity Sensor
|
 GaN Systems Inc. |
GS-065-004-1-L
|
1Mb/16P |
650 V E-mode GaN transistor
Rev 220712 |
|
GS-065-004-6-L
|
786Kb/16P |
700 V E-mode GaN transistor Datasheet
Rev 240328 |
|
GS-065-008-1-L
|
1Mb/16P |
650 V E-mode GaN transistor
Rev 220712 |
|
GS-065-008-6-L
|
801Kb/16P |
700 V E-mode GaN transistor Datasheet
Rev 240328 |
|
GS-065-008-6-L-MR
|
801Kb/16P |
700 V E-mode GaN transistor Datasheet
Rev 240328 |
|
GS-065-008-6-L-TR
|
801Kb/16P |
700 V E-mode GaN transistor Datasheet
Rev 240328 |
|
GS-065-011-1-L
|
1Mb/16P |
650 V E-mode GaN transistor
Rev 220708 |
|
GS-065-011-2-L
|
1Mb/16P |
650 V E-mode GaN transistor
Rev 220712 |
|
GS-065-011-6-LR
|
865Kb/17P |
700 V E-mode GaN transistor Datasheet
Rev 240328 |
|
GS-065-011-6-LR-MR
|
865Kb/17P |
700 V E-mode GaN transistor Datasheet
Rev 240328 |
|
GS-065-011-6-LR-TR
|
865Kb/17P |
700 V E-mode GaN transistor Datasheet
Rev 240328 |
|
GS-065-014-6-L
|
816Kb/16P |
700 V E-mode GaN transistor Datasheet
Rev 240409 |