| 制造商 | 部件名 | 数据表 | 功能描述 |
 Guangdong Huixin Electr... |
HSD12
|
1Mb/4P
|
Unidirectional TVS Diodes
|
 DLG Hanbit co.,Ltd. |
HSD128M32B8A
|
586Kb/11P
|
Synchronous DRAM Module 512Mbyte (128Mx32Bit), 8K Ref., 3.3V
|
|
HSD128M32B8A-13
|
586Kb/11P
|
Synchronous DRAM Module 512Mbyte (128Mx32Bit), 8K Ref., 3.3V
|
 Hanbit Electronics Co.,... |
HSD128M72B9K
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
|
HSD128M72B9K-10
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
|
HSD128M72B9K-10L
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
|
HSD128M72B9K-12
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
|
HSD128M72B9K-13
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
|
HSD128M72B9K-F10
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
|
HSD128M72B9K-F10L
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
|
HSD128M72B9K-F12
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
|
HSD128M72B9K-F13
|
207Kb/11P
|
Synchronous DRAM Module 1024Mbyte (128Mx72Bit), 8K Ref., 3.3V ECC Unbuffered SO-DIMM,
|
 Guangdong Huixin Electr... |
HSD12C
|
868Kb/4P
|
Bidirectional TVS Diodes
|
|
HSD12FDT
|
656Kb/4P
|
Transient Voltage Suppressor
|
|
HSD12VHHU
|
485Kb/4P
|
Single Line Uni-directional Transient Voltage Suppressor
|