| 制造商 | 部件名 | 数据表 | 功能描述 |
 NXP Semiconductors |
PIMN31
|
94Kb/11P
|
500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
Rev. 01-19 June 2007
|
 Nexperia B.V. All right... |
PIMN31
|
209Kb/12P
|
500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
Rev. 01 - 19 June 2007
|
|
PIMN32
|
259Kb/11P
|
50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
16 February 2022
|
|
PIMN32-Q
|
260Kb/12P
|
50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
16 February 2022
|
|
PIMN32-QX
|
260Kb/12P
|
50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
16 February 2022
|
|
PIMN32X
|
259Kb/11P
|
50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ
16 February 2022
|
| Search Partnumber :
Start with "IMN3" -
Total : 12 ( 1/1 Page) |
 Rohm |
IMN10
|
83Kb/3P |
Switching diode
|
|
IMN10
|
174Kb/3P |
Switching diode
|
|
IMN10
|
154Kb/3P |
Switching diode
|
|
IMN10
|
1,011Kb/3P |
Switching Diode
|
|
IMN10
|
527Kb/4P |
Switching Diode Ultra high speed switching High reliability.
|
|
IMN10
|
1Mb/8P |
Switching Diode
|
|
IMN10-T108
|
524Kb/5P |
Switching Diode
|
|
IMN10FH
|
1Mb/8P |
Switching Diode
|
|
IMN10
|
154Kb/3P |
Switching diode
|
|
IMN10
|
1,011Kb/3P |
Switching Diode
|
|
IMN10
|
527Kb/4P |
Switching Diode Ultra high speed switching High reliability.
|
|
IMN10
|
1Mb/8P |
Switching Diode
|
|
IMN11
|
83Kb/3P |
Switching diode
|
|
IMN11
|
175Kb/3P |
Switching diode
|