| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
IPD60N10S4-12
|
291Kb/9P
|
N-channel - Normal Level - Enhancement mode
Rev. 1.0 2014-06-30
|
|
IPD60N10S4L-12
|
136Kb/9P
|
OptiMOSTM-T2 Power-Transistor
Rev. 1.0 2011-11-30
|
| Search Partnumber :
Start with "IPD60N10S4" -
Total : 63 ( 1/4 Page) |
 Infineon Technologies A... |
IPD60N10S4-12
|
291Kb/9P |
N-channel - Normal Level - Enhancement mode
Rev. 1.0 2014-06-30 |
|
IPD60N10S4L-12
|
136Kb/9P |
OptiMOSTM-T2 Power-Transistor
Rev. 1.0 2011-11-30 |
 Inchange Semiconductor ... |
IPD600N25N3
|
336Kb/2P |
N-Channel MOSFET Transistor
|
 Infineon Technologies A... |
IPD600N25N3G
|
313Kb/9P |
OptiMOSTM3 Power-Transistor
Rev. 2.2 2009-10-23 |
|
IPD600N25N3G
|
492Kb/9P |
OptiMOSTM3 Power-Transistor
Rev. 2.3 2011-07-14 |
|
IPD600N25N3G
|
492Kb/9P |
OptiMOSTM3 Power-Transistor
Rev. 2.3 2011-07-14 |
|
IPD60R145CFD7
|
1Mb/14P |
600V CoolMOS짧 CFD7 Power Device
Rev.2.2,2020-05-26 |
 Inchange Semiconductor ... |
IPD60R170CFD7
|
335Kb/2P |
N-Channel MOSFET Transistor
|
 Infineon Technologies A... |
IPD60R170CFD7
|
1Mb/14P |
600V CoolMOS짧 CFD7 Power Transistor
Rev.2.1,2018-01-18 |
|
IPD60R180C7
|
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
 Inchange Semiconductor ... |
IPD60R180C7
|
335Kb/2P |
N-Channel MOSFET Transistor
|
 Infineon Technologies A... |
IPD60R180C7
|
1Mb/15P |
Metal Oxide Semiconductor Field Effect Transistor
Rev.2.0 |
|
IPD60R180CM8
|
1Mb/14P |
MOSFET 600V CoolMOSª CM8 Power Transistor
Rev. 2.1, 2024-03-21 |
|
IPD60R180P7
|
1Mb/14P |
600V CoolMOS짧 P7 Power Transistor
Rev.2.1,2017-02-17 |
 Inchange Semiconductor ... |
IPD60R180P7
|
328Kb/2P |
isc N-Channel MOSFET Transistor
|
 Infineon Technologies A... |
IPD60R180P7S
|
1Mb/14P |
600V CoolMOS짧 P7 Power Transistor
Rev.2.0,2017-06-12 |
 Inchange Semiconductor ... |
IPD60R180P7
|
328Kb/2P |
isc N-Channel MOSFET Transistor
|
 Infineon Technologies A... |
IPD60R1K0CE
|
2Mb/16P |
600V CoolMOS™ CE Power Transistor
Rev.2.0,2014-09-25 |