| 制造商 | 部件名 | 数据表 | 功能描述 |
 Vishay Siliconix |
IRFD9110
|
1Mb/8P
|
Power MOSFET
07-Jul-08
|
|
IRFD9110
|
1Mb/9P
|
Power MOSFET
25-Oct-10
|
|
IRFD9110
|
825Kb/9P
|
Power MOSFET
30-Aug-2021
|
 Intersil Corporation |
IRFD9110
|
54Kb/6P
|
0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
July 1999
|
 International Rectifier |
IRFD9110
|
173Kb/6P
|
Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-0.70A)
|
 Fairchild Semiconductor |
IRFD9110
|
93Kb/7P
|
0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
|
 Harris Corporation |
IRFD9110
|
342Kb/6P
|
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
|
 International Rectifier |
IRFD9110
|
218Kb/6P
|
1-WATT RATED POWER MOSFETs
|
 Vishay Siliconix |
IRFD9110PBF
|
1Mb/8P
|
Power MOSFET
07-Jul-08
|
|
IRFD9110PBF
|
825Kb/9P
|
Power MOSFET
30-Aug-2021
|
 International Rectifier |
IRFD9110PBF
|
1Mb/8P
|
HEXFET POWER MOSFET ( VDSS = -100V , RDS(on) = 1.2廓 , ID = -0.70A )
|
 Vishay Siliconix |
IRFD9110
|
1Mb/9P
|
Power MOSFET
25-Oct-10
|
|
IRFD9110
|
825Kb/9P
|
Power MOSFET
30-Aug-2021
|