| 制造商 | 部件名 | 数据表 | 功能描述 |
 NEC |
NE662M16-T3
|
63Kb/9P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
 California Eastern Labs |
NE662M16-T3-A
|
175Kb/10P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
 NEC |
NESG2021M16-T3
|
120Kb/12P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 Renesas Technology Corp |
NESG2021M16-T3
|
337Kb/14P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2009
|
 California Micro Device... |
NESG2021M16-T3
|
224Kb/3P
|
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
 California Eastern Labs |
NESG2021M16-T3
|
861Kb/11P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 NEC |
NESG2021M16-T3-A
|
120Kb/12P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 Renesas Technology Corp |
NESG2021M16-T3-A
|
337Kb/14P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2009
|
 California Micro Device... |
NESG2021M16-T3-A
|
224Kb/3P
|
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
 California Eastern Labs |
NESG2021M16-T3-A
|
861Kb/11P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 NEC |
NESG2031M16-T3
|
119Kb/12P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 Renesas Technology Corp |
NESG2031M16-T3
|
336Kb/14P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2009
|
 NEC |
NESG2031M16-T3-A
|
119Kb/12P
|
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 Renesas Technology Corp |
NESG2031M16-T3-A
|
336Kb/14P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2009
|
 California Eastern Labs |
NESG2031M16-T3-A
|
230Kb/3P
|
HIGH FREQUENCY TRANSISTOR
|
 NEC |
NESG2101M16-T3
|
83Kb/2P
|
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
|
NESG2101M16-T3
|
135Kb/13P
|
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 Renesas Technology Corp |
NESG2101M16-T3
|
352Kb/15P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2009
|
 NEC |
NESG2101M16-T3-A
|
135Kb/13P
|
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
 Renesas Technology Corp |
NESG2101M16-T3-A
|
352Kb/15P
|
NPN SILICON GERMANIUM RF TRANSISTOR
2009
|