| 制造商 | 部件名 | 数据表 | 功能描述 |
 New Jersey Semi-Conduct... |
1N1611
|
79Kb/2P
|
Ka Band Point Contact Detector Diodes
|
 Arista Networks, Inc |
AN1611
|
1Mb/50P
|
7100 Series 1 RU (Gen 3) Data Center Switches
|
 Alpha & Omega Semicondu... |
AON1611
|
226Kb/5P
|
20V P-Channel MOSFET
|
 Infinite Electronics In... |
FMCN1611
|
598Kb/3P
|
SMA Female Connector Field Replaceable Attachment 4 Hole Flange 0.012 inch Pin, .250 inch Hole Spacing with Metal Contact Ring
REV 1.0A
|
 Toshiba Semiconductor |
RN1611
|
177Kb/5P
|
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
|
| Search Partnumber :
Start with "N1611" -
Total : 36 ( 1/2 Page) |
 fujitsu semiconductor |
N16B-0558-B240
|
320Kb/7P |
Resistive Touch Panel Specification
|
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N16B-0558-B240
|
570Kb/7P |
STANDARD Resistive Touch Panel Specification 7-Wire Series
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N16B-0558-B270
|
453Kb/7P |
STANDARD Resistive Touch Panel Specification
|
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N16B-0558-B720
|
320Kb/7P |
Resistive Touch Panel Specification
|
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N16B-0558-B720
|
570Kb/7P |
STANDARD Resistive Touch Panel Specification 7-Wire Series
|
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N16B-0558-B730
|
453Kb/7P |
STANDARD Resistive Touch Panel Specification
|
 NanoAmp Solutions, Inc. |
N16D1618LPA
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAC2-10I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAC2-60I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAC2-75I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAT2-10I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAT2-60I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAT2-75I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|
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N16D1618LPAZ2-10I
|
668Kb/27P |
512K 횞 16 Bits 횞 2 Banks Low Power Synchronous DRAM
|