PTFB213208FV-V2-R0 数据表, PDF

	PTFB213208FV-V2-R0	PTFB213208FV
如同	No Data	PTFB213208FV(2)
开始	No Data	PTFB213208FV(4) PTFB213208FVV(4)
结尾	No Data	No Data
包括	No Data	No Data

制造商

制造商	部件名	数据表	功能描述
Infineon Technologies A...	PTFB213208FV	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
Cree, Inc	PTFB213208FV	659Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 - 2170 MHz
Infineon Technologies A...	PTFB213208FVV1	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB213208FVV1R250	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB213208FVV1R250XTMA1	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB213208FVV1XWSA1	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
Search Partnumber : Start with "PTFB213208FV" - Total : 62 ( 1/4 Page)
Infineon Technologies A...	PTFB213208FVV1	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB213208FVV1R250	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB213208FVV1R250XTMA1	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
	PTFB213208FVV1XWSA1	221Kb/13P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2170 MHz Rev. 02, 2012-07-03
Cree, Inc	PTFB213004F	528Kb/16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz
Infineon Technologies A...	PTFB213004F	740Kb/16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB213004F	674Kb/16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz Rev. 05.2, 2010-12-09
	PTFB213004FV2R0	740Kb/16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB213004FV2R0XTMA1	740Kb/16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB213004FV2R250	740Kb/16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB213004FV2R250XTMA1	740Kb/16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB213004F	740Kb/16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB210801FA	910Kb/11P	Thermally-Enhanced High Power RF LDMOS FET Rev. 01.1, 2016-06-14
Cree, Inc	PTFB210801FA	636Kb/11P	Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz

PTFB213208FV-V2-R0 数据表, PDF [销售商]

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Element14	PTF08AE	OMRON INDUSTRIAL AUTOMATION	SOCKET, DIN/SURFACE, 2 POLE, RELAY; Socket Mounting:DIN Rail; Socket Terminals:Screw; No. of Pins:8P...
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PTFB213208FV-V2-R0 销售商

销售商	部件名	制造商	功能描述	Price	Qty. BuyNow

PTFB213208FV-V2-R0 数据表, PDF

PTFB213208FV-V2-R0 数据表, PDF [销售商]

PTFB213208FV-V2-R0 销售商

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