| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PTFB241402F
|
556Kb/13P
|
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 03, 2010-04-19
|
|
PTFB241402FV1R0
|
810Kb/13P
|
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15
|
|
PTFB241402FV1R0XTMA1
|
810Kb/13P
|
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15
|
|
PTFB241402FV1R250
|
810Kb/13P
|
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15
|
|
PTFB241402FV1R250XTMA1
|
810Kb/13P
|
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15
|
|
PTFB241402F
|
810Kb/13P
|
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15
|
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 Infineon Technologies A... |
PTFB241402F
|
556Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 03, 2010-04-19 |
|
PTFB241402FV1R0
|
810Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15 |
|
PTFB241402FV1R0XTMA1
|
810Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15 |
|
PTFB241402FV1R250
|
810Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15 |
|
PTFB241402FV1R250XTMA1
|
810Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15 |
|
PTFB241402F
|
810Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15 |
|
PTFB201402FC
|
841Kb/14P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2016-06-14 |
 Cree, Inc |
PTFB201402FC
|
595Kb/14P |
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 - 2025 MHz
|
 Infineon Technologies A... |
PTFB201402FCV1R0
|
841Kb/14P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2016-06-14 |
|
PTFB201402FCV1R0XTMA1
|
841Kb/14P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2016-06-14 |
|
PTFB201402FCV1R250
|
841Kb/14P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2016-06-14 |
|
PTFB201402FCV1R250XTMA1
|
841Kb/14P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2016-06-14 |
 Cree, Inc |
PTFB210801FA
|
636Kb/11P |
Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 ??2170 MHz
|
 Infineon Technologies A... |
PTFB210801FA
|
910Kb/11P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 01.1, 2016-06-14 |