| 制造商 | 部件名 | 数据表 | 功能描述 |
 Infineon Technologies A... |
PXAC261212FC
|
210Kb/10P
|
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.1, 2014-06-30
|
 Cree, Inc |
PXAC261212FC
|
557Kb/10P
|
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
|
 Infineon Technologies A... |
PXAC261212FCV1R0
|
1Mb/10P
|
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22
|
|
PXAC261212FCV1R0XTMA1
|
1Mb/10P
|
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22
|
|
PXAC261212FCV1R250
|
1Mb/10P
|
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22
|
|
PXAC261212FCV1R250XTMA1
|
1Mb/10P
|
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22
|
|
PXAC261212FC
|
1Mb/10P
|
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22
|
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 Infineon Technologies A... |
PXAC261212FCV1R0
|
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22 |
|
PXAC261212FCV1R0XTMA1
|
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22 |
|
PXAC261212FCV1R250
|
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22 |
|
PXAC261212FCV1R250XTMA1
|
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22 |
|
PXAC261212FC
|
1Mb/10P |
Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 ??2690 MHz
Rev. 02.2, 2016-06-22 |
 Cree, Inc |
PXAC261002FC
|
634Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
|
 Infineon Technologies A... |
PXAC261002FC
|
162Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15 |
|
PXAC261002FCV1R0
|
162Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15 |
|
PXAC261002FCV1R0XTMA1
|
162Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15 |
|
PXAC261002FCV1R250
|
162Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15 |
|
PXAC261002FCV1R250XTMA1
|
162Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2490 ??2690 MHz
Rev. 03.3, 2016-06-15 |
 Cree, Inc |
PXAC260602FC
|
633Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB 28 V, 2620 ??2690 MHz
|
 Infineon Technologies A... |
PXAC260602FC
|
352Kb/8P |
Thermally-Enhanced High Power RF LDMOS FET
Rev. 02.2, 2014-05-14 |