| 制造商 | 部件名 | 数据表 | 功能描述 |
 Sanken electric |
RM3
|
21Kb/1P
|
Rectifier Diodes
|
 EIC discrete Semiconduc... |
RM3
|
63Kb/2P
|
SILICON RECTIFIER DIODES
|
 TEKTRONIX, INC. |
RM3
|
2Mb/36P
|
Mixed Domain Oscilloscopes
|
 Mobile Mark, Inc. |
RM3-2400-1C-BLK-12
|
295Kb/1P
|
Surface Mount & Mag-Mount 2.4 GHz & Wideband
9/2018
|
|
RM3-2400-DN-BLK
|
295Kb/1P
|
Surface Mount & Mag-Mount 2.4 GHz & Wideband
9/2018
|
|
RM3-900-1C-BLK-12
|
278Kb/1P
|
Surface Mount & Mag-Mount Cellular 3G & UMTS/AWS
9/2018
|
|
RM3-900/1900-1C-BLK-12
|
278Kb/1P
|
Surface Mount & Mag-Mount Cellular 3G & UMTS/AWS
9/2018
|
|
RM3-900/1900-DN-BLK
|
278Kb/1P
|
Surface Mount & Mag-Mount Cellular 3G & UMTS/AWS
9/2018
|
|
RM3-925/1800-1C-BLK-12
|
278Kb/1P
|
Surface Mount & Mag-Mount Cellular 3G & UMTS/AWS
9/2018
|
|
RM3-925/1800-DN-BLK
|
278Kb/1P
|
Surface Mount & Mag-Mount Cellular 3G & UMTS/AWS
9/2018
|
 TEKTRONIX, INC. |
RM3000
|
711Kb/12P
|
Digital Phosphor Oscilloscopes
|
 List of Unclassifed Man... |
RM3000
|
142Kb/1P
|
Additional Accessories
|
 Rectron Semiconductor |
RM3003S6
|
437Kb/12P
|
N and P-Channel Enhancement Mode Power MOSFET
2018-09/15 REV:O
|
|
RM3003S6V
|
532Kb/11P
|
N and P-Channel Enhancement Mode Power MOSFET
2022-05/15 REV:O
|
 Mitsubishi Electric Sem... |
RM300CA-9W
|
62Kb/3P
|
HIGH FREQUENCY USE INSULATED TYPE
|
 Powerex Power Semicondu... |
RM300CA-9W
|
65Kb/2P
|
Fast Recovery Welder Diode Module (300 Amperes/450 Volts)
|
 Mitsubishi Electric Sem... |
RM300DG-90S
|
79Kb/4P
|
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
 Powerex Power Semicondu... |
RM300DY1-24S
|
243Kb/2P
|
Super Fast Recovery Dual Diode Module 300 Amperes/1200 Volts
|
 Mitsubishi Electric Sem... |
RM300HA-24F
|
46Kb/3P
|
HIGH SPEED SWITCHING USE INSULATED TYPE
|
 Rectron Semiconductor |
RM300N80T7
|
351Kb/7P
|
N-Channel Enhancement Mode Power MOSFET
2022-09/113 REV:O
|