| 制造商 | 部件名 | 数据表 | 功能描述 |
Ruichips Semiconductor ... |
RU60E16R
|
291Kb/9P
|
N-Channel Advanced Power MOSFET
|
| Search Partnumber :
Start with "RU60E16R" -
Total : 45 ( 1/3 Page) |
Ruichips Semiconductor ... |
RU60E16L
|
278Kb/9P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU60E16L
|
2Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU60E25K
|
603Kb/8P |
N-Channel Advanced Power MOSFET
|
|
RU60E25L
|
277Kb/9P |
N-Channel Advanced Power MOSFET
|
VBsemi Electronics Co.,... |
RU60E25L
|
896Kb/6P |
N-Channel 6 0-V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU60E25L
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU60E25R
|
294Kb/9P |
N-Channel Advanced Power MOSFET
|
|
RU60E5D
|
245Kb/8P |
N-Channel Advanced Power MOSFET
|
|
RU60E5H
|
271Kb/9P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU60E5H
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Ruichips Semiconductor ... |
RU60E6D
|
243Kb/8P |
N-Channel Advanced Power MOSFET
|
|
RU60E6H
|
279Kb/9P |
N-Channel Advanced Power MOSFET
|
SHENZHEN DOINGTER SEMIC... |
RU60E6H
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
Turck, Inc. |
RU600D-M30M-LIU8X2-H1141
|
1Mb/5P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU600D-M30M-UPN8X2-H1141
|
1Mb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU600U-M30E-2UP8X2T-H1151
|
1Mb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU600U-M30E-LI8X2-H1151
|
1Mb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU600U-M30E-LU8X2-H1151
|
1Mb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
|
RU600U-M30M-2UP8X2-H1151
|
1Mb/4P |
Ultrasonic Sensor – Diffuse Mode Sensor
11/07/2023 |
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