| 制造商 | 部件名 | 数据表 | 功能描述 |
 SUYIN USA, INC. |
020173MR004S213ZU
|
91Kb/1P
|
USB CONN R/A DIP FEMAL TYPE SERIES A
|
 Vishay Siliconix |
100S2130130XXXX
|
343Kb/4P
|
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
26-Mar-15
|
|
100S2130222XXXX
|
343Kb/4P
|
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
26-Mar-15
|
|
100S2130470XXXX
|
343Kb/4P
|
1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS
26-Mar-15
|
|
122S2130130XXXX
|
351Kb/4P
|
1 1/16" (27 mm) Single Turn Wirewound Precision Potentiometer
26-Mar-15
|
|
122S2130222XXXX
|
351Kb/4P
|
1 1/16" (27 mm) Single Turn Wirewound Precision Potentiometer
26-Mar-15
|
|
122S2130470XXXX
|
351Kb/4P
|
1 1/16" (27 mm) Single Turn Wirewound Precision Potentiometer
26-Mar-15
|
|
128S2130130XXXX
|
347Kb/4P
|
1 1/16" (27 mm) Single Turn Conductive Plastic Precision Potentiometer
27-Mar-15
|
|
128S2130222XXXX
|
347Kb/4P
|
1 1/16" (27 mm) Single Turn Conductive Plastic Precision Potentiometer
27-Mar-15
|
|
128S2130470XXXX
|
347Kb/4P
|
1 1/16" (27 mm) Single Turn Conductive Plastic Precision Potentiometer
27-Mar-15
|
 A-Data Technology |
AD4S2133W4G15-2
|
365Kb/2P
|
New generation DDR4 performance
|
|
AD4S2133W4G15-B
|
365Kb/2P
|
New generation DDR4 performance
|
|
AD4S2133W4G15-R
|
365Kb/2P
|
New generation DDR4 performance
|
|
AD4S2133W4G15-S
|
365Kb/2P
|
New generation DDR4 performance
|
|
AD4S2133W8G15-2
|
365Kb/2P
|
New generation DDR4 performance
|
|
AD4S2133W8G15-B
|
365Kb/2P
|
New generation DDR4 performance
|
|
AD4S2133W8G15-R
|
365Kb/2P
|
New generation DDR4 performance
|
|
AD4S2133W8G15-S
|
365Kb/2P
|
New generation DDR4 performance
|
 Alpha & Omega Semicondu... |
AONS21303C
|
630Kb/6P
|
30V P-Channel MOSFET
Rev.1.0: May 2020
|
|
AONS21307
|
342Kb/6P
|
30V P-Channel MOSFET
Rev.1.0: October 2017
|