| 制造商 | 部件名 | 数据表 | 功能描述 |
 APEM |
ADTS21VB
|
237Kb/5P
|
(SQUARE STEM WITH CAP OPTIONS) MECHANICAL CONTACT STYLE
|
 NXP Semiconductors |
BAS21VD
|
126Kb/8P
|
High-voltage switching diode array
2003 Jul 02
|
|
BAS21VD
|
60Kb/8P
|
High-voltage switching diode array
2003 Jul 02
|
 Nexperia B.V. All right... |
BAS21VD
|
666Kb/11P
|
High-voltage switching diodes
1 August 2013
|
|
BAS21VD-Q
|
210Kb/10P
|
High-voltage switching diodes
27 August 2024
|
 NXP Semiconductors |
BAS21VD
|
228Kb/11P
|
High-voltage switching diodes
1 August 2013
|
 Rohm |
BAS21VM
|
1,002Kb/7P
|
Switching Diode
|
|
BAS21VMFH
|
1,020Kb/8P
|
Switching Diode
|
 MTRONPTI |
MVS21V1AJ
|
263Kb/1P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V1AJ
|
430Kb/2P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V1AJ-R
|
430Kb/2P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V1CJ
|
263Kb/1P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V1CJ
|
430Kb/2P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V1CJ-R
|
430Kb/2P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V2AJ
|
263Kb/1P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V2AJ
|
430Kb/2P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V2AJ-R
|
430Kb/2P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V2CJ
|
430Kb/2P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V2CJ
|
263Kb/1P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|
|
MVS21V2CJ-R
|
430Kb/2P
|
9x14 mm, 5.0 Volt, HCMOS/TTL, VCXO
|