| 制造商 | 部件名 | 数据表 | 功能描述 |
 SeCoS Halbleitertechnol... |
SSP45N10
|
581Kb/4P
|
N-Channel Enhancement Mode MOSFET
|
|
SSP45N10
|
581Kb/4P
|
N-Channel Enhancement Mode MOSFET
|
 Fairchild Semiconductor |
SSP45N20
|
914Kb/10P
|
200V N-Channel MOSFET
|
|
SSP45N20B
|
914Kb/10P
|
200V N-Channel MOSFET
|
 Inchange Semiconductor ... |
SSP4N45
|
279Kb/2P
|
isc N-Channel MOSFET Transistor
|
|
SSP4N50
|
279Kb/2P
|
isc N-Channel MOSFET Transistor
|
|
SSP4N55
|
279Kb/2P
|
isc N-Channel MOSFET Transistor
|
 VBsemi Electronics Co.,... |
SSP4N60
|
1Mb/9P
|
N-Channel 650 V (D-S) MOSFET
|
 Inchange Semiconductor ... |
SSP4N60
|
280Kb/2P
|
isc N-Channel MOSFET Transistor
|
 VBsemi Electronics Co.,... |
SSP4N60A
|
1Mb/9P
|
N-Channel 650 V (D-S) MOSFET
|
 Fairchild Semiconductor |
SSP4N60AS
|
256Kb/7P
|
Advanced Power MOSFET
|
 VBsemi Electronics Co.,... |
SSP4N60AS
|
1Mb/9P
|
N-Channel 650 V (D-S) MOSFET
|
 Inchange Semiconductor ... |
SSP4N60AS
|
280Kb/2P
|
isc N-Channel MOSFET Transistor
|
 Fairchild Semiconductor |
SSP4N60B
|
890Kb/10P
|
600V N-Channel MOSFET
|
 VBsemi Electronics Co.,... |
SSP4N60B
|
1Mb/9P
|
N-Channel 650 V (D-S) MOSFET
|
 Samsung semiconductor |
SSP4N70
|
296Kb/5P
|
improved inductive ruggedness
|
 Inchange Semiconductor ... |
SSP4N70
|
279Kb/2P
|
isc N-Channel MOSFET Transistor
|
 Samsung semiconductor |
SSP4N80
|
296Kb/5P
|
improved inductive ruggedness
|
 Inchange Semiconductor ... |
SSP4N80A
|
348Kb/2P
|
isc N-Channel MOSFET Transistor
|
 Fairchild Semiconductor |
SSP4N80AS
|
192Kb/7P
|
Avalanche Rugged Technology
|