| 制造商 | 部件名 | 数据表 | 功能描述 |
 Hammond Manufacturing L... |
CWTL10
|
50Kb/1P
|
Raccord telescopique
|
|
CWTL10
|
157Kb/1P
|
DATA SUBJECT TO CHANGE WITHOUT NOTLCE
|
 Vishay Siliconix |
FSTL10
|
188Kb/4P
|
Wirewound Resistor, Industrial Power, Silicone Coated, Tubular
02-Sep-16
|
|
FVTL10
|
200Kb/4P
|
Wirewound Resistor, Industrial Power, Vitreous Coated, Tubular
18-Aug-16
|
 Samsung semiconductor |
K4S280832B-TL10
|
124Kb/10P
|
4M x 8Bit x 4 Banks Sychronous DRAM
|
|
K4S281632B-TL10
|
108Kb/10P
|
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
|
K4S281632M-TL10
|
87Kb/10P
|
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
|
|
K4S643232C-TL10
|
1Mb/43P
|
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
|
K6R4016C1D-TL10
|
139Kb/12P
|
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
|
 Sharp Corporation |
LH28F800BJB-PTTL10
|
680Kb/47P
|
8M (x8/x16) Flash Memory
|
 Toshiba Semiconductor |
TC59S6404BFT/BFTL10
|
2Mb/51P
|
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM
|
|
TC59S6408BFT/BFTL10
|
2Mb/51P
|
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM
|
|
TC59S6416BFT/BFTL10
|
2Mb/51P
|
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM
|
 Vishay Siliconix |
TFPTL10
|
107Kb/5P
|
Radial Leaded PTC - Nickel Thin Film Linear Thermistors
25-Oct-11
|