| 制造商 | 部件名 | 数据表 | 功能描述 |
 NTE Electronics |
MSC125V829
|
22Kb/3P
|
MOTOR START AC ELECTROLYTIC
|
|
MSC125V829
|
2Mb/3P
|
MOTOR START AC ELECTROLYTIC
|
 Zetex Semiconductors |
ZMV829
|
97Kb/6P
|
SILICON 28V HYPERABRUPT VARACTOR DIODES
|
|
ZMV829
|
151Kb/6P
|
SILICON 28V HYPERABRUPT VARACTOR DIODES
|
|
ZMV829
|
93Kb/6P
|
SILICON 25V HYPERABRUPT VARACTOR DIODES
|
|
ZMV829
|
334Kb/8P
|
Silicon 25V hyperabrupt varactor diodes
|
| Search Partnumber :
Start with "V829" -
Total : 36 ( 1/2 Page) |
 New Jersey Semi-Conduct... |
V820
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
 Vatronics Technologies ... |
V822MY5VAC400
|
52Kb/2P |
Safety Standard Capacitors
|
 New Jersey Semi-Conduct... |
V825
|
102Kb/1P |
These rectifiers offer high voltage ranges in minimum-sized
|
 Mosel Vitelic, Corp |
V826516B04S
|
285Kb/14P |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64
|
|
V826516G04S
|
275Kb/14P |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64
|
|
V826516K04S
|
159Kb/13P |
2.5 VOLT 16M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
|
V826532K04S
|
268Kb/14P |
2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
|
V82658B04S
|
220Kb/14P |
64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64
|
|
V82658J04S
|
319Kb/13P |
2.5 VOLT 8M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
|
V826632B24S
|
217Kb/14P |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
|
V826632G24S
|
213Kb/14P |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
|
V826632K24S
|
126Kb/14P |
2.5 VOLT 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|
|
V826664G24S
|
199Kb/14P |
512 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 64M x 64
|
|
V826664K24S
|
243Kb/14P |
2.5 VOLT 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MODULE
|