| 制造商 | 部件名 | 数据表 | 功能描述 |
 Vishay Siliconix |
VS-GA100NA60UP
|
234Kb/9P
|
Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A
01-Feb-12
|
|
VS-GA100TS120UPBF
|
263Kb/10P
|
Very low conduction and switching losses
26-Mar-12
|
|
VS-GA100TS60SFPBF
|
181Kb/7P
|
Optimized for hard switching speed
10-Jun-15
|
|
VS-GA100TS60SFPBF
|
153Kb/7P
|
“Half-Bridge” IGBT INT-A-PAK, (Standard Speed IGBT), 100 A
10-Jun-15
|
|
VS-GA100TS60SFPBF
|
153Kb/7P
|
“Half-Bridge” IGBT INT-A-PAK, (Standard Speed IGBT), 100 A
10-Jun-15
|
|
VS-GA200HS60S1PBF
|
154Kb/7P
|
Very low conduction losses
10-Jun-15
|
|
VS-GA200SA60UP
|
153Kb/8P
|
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
26-Oct-11
|
|
VS-GA200TH60S
|
165Kb/7P
|
High short circuit capability
10-Jun-15
|
|
VS-GA250SA60S
|
288Kb/9P
|
Insulated Gate Bipolar Transistor Ultralow VCE(on), 250 A
20-May-16
|
|
VS-GA300TD60S
|
140Kb/8P
|
Dual INT-A-PAK Low Profile “Half Bridge” (Standard Speed IGBT), 300 A
11-Dec-17
|
|
VS-GA400TD60S
|
140Kb/8P
|
Dual INT-A-PAK Low Profile “Half Bridge” (Standard Speed IGBT), 400 A
11-Dec-17
|
|
VS-GB100DA60UP
|
170Kb/9P
|
Very low internal inductance
13-Sep-13
|
|
VS-GB100LH120N
|
166Kb/7P
|
High short circuit capability, self limiting to 6 x IC
10-Jun-15
|
|
VS-GB100LP120N
|
123Kb/7P
|
Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A
10-Jun-15
|
|
VS-GB100NH120N
|
164Kb/7P
|
Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A
10-Jun-15
|
|
VS-GB100TH120N
|
163Kb/7P
|
Molding Type Module IGBT, 2-in-1 Package, 1200 V and 100 A
10-Jun-15
|
|
VS-GB100TH120U
|
167Kb/8P
|
Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A
10-Jun-15
|
|
VS-GB100TP120N
|
97Kb/6P
|
Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A
10-Jun-15
|
|
VS-GB100TS60NPBF
|
213Kb/9P
|
INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 108 A
10-Jun-15
|
|
VS-GB100YG120NT
|
385Kb/9P
|
IGBT ECONO3 Module, 100 A
22-Apr-16
|