| 制造商 | 部件名 | 数据表 | 功能描述 |
 Pan Jit International I... |
1SS417TM
|
122Kb/5P |
SURFACE MOUNT SCHOTTKY BARRIER
|
|
1SS417TM_R1_00001
|
122Kb/5P |
SURFACE MOUNT SCHOTTKY BARRIER
|
|
1SS417TM_R1_00001
|
121Kb/5P |
SURFACE MOUNT SCHOTTKY BARRIER
June 2,2016-REV.03 |
|
1SS417TM
|
121Kb/5P |
SURFACE MOUNT SCHOTTKY BARRIER
June 2,2016-REV.03 |
 Toshiba Semiconductor |
1SS417CT
|
179Kb/3P |
High Speed Switching Application
|
 Pan Jit International I... |
1SS417FN2
|
155Kb/5P |
SURFACE MOUNT SCHOTTKY BARRIER
|
|
1SS417FN2
|
147Kb/4P |
SURFACE MOUNT SCHOTTKY BARRIER
|
|
1SS417FN2_R1_00001
|
147Kb/4P |
SURFACE MOUNT SCHOTTKY BARRIER
|
|
1SS417FN2_R1_00001
|
146Kb/4P |
SURFACE MOUNT SCHOTTKY BARRIER
May 11,2017-REV.01 |
|
1SS417FN2
|
146Kb/4P |
SURFACE MOUNT SCHOTTKY BARRIER
May 11,2017-REV.01 |
 Toshiba Semiconductor |
1SS417
|
139Kb/3P |
High Speed Switching Application
|
|
1SS412
|
171Kb/3P |
General-Purpose Rectifier Applications
|
|
1SS412
|
196Kb/3P |
TOSHIBA Diode Silicon Epitaxial Planar Type
|
|
1SS413
|
175Kb/3P |
High Speed Switching Application
|
 SEMTECH ELECTRONICS LTD... |
1SS413
|
134Kb/2P |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
 Toshiba Semiconductor |
1SS413CT
|
178Kb/5P |
Schottky Barrier Diode Silicon Epitaxial
|
|
1SS413
|
188Kb/7P |
Schottky Barrier Diode Silicon Epitaxial
|
|
1SS416
|
133Kb/3P |
High Speed Switching Application
|
|
1SS416CT
|
187Kb/4P |
High Speed Switching Application
|
|
1SS417
|
149Kb/3P |
High Speed Switching Application
|