| 制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
1SV100
|
116Kb/3P |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
|
|
1SV101
|
150Kb/3P |
VARIABLE CAPACITANCE DIODE (FM TUNER APPLICATIONS)
|
|
1SV102
|
166Kb/3P |
VARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS)
|
|
1SV103
|
119Kb/2P |
Variable Capacitance Diode, FM Radio Band Tuning Applications
|
Hitachi Semiconductor |
1SV121
|
22Kb/3P |
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
|
Shenzhen Taychipst Elec... |
1SV121
|
5Mb/2P |
SILICON EPITAXIAL PLANAR PIN DIODE
|
Toshiba Semiconductor |
1SV123
|
34Kb/1P |
VARIABLE CAPACITANCE DIODE
|
|
1SV128
|
94Kb/2P |
DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)
|
Guangdong Kexin Industr... |
1SV128
|
34Kb/1P |
VHF~UHF BAND RF ATTENUATOR APPLICATIONS
|
Toshiba Semiconductor |
1SV147
|
152Kb/3P |
BARIABLE CAPACITANCE DIODE (FM RADIO BAND TUNING APPLICATIONS)
|
|
1SV149
|
186Kb/3P |
BARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS)
|
|
1SV153
|
35Kb/1P |
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
|
Renesas Technology Corp |
1SV156
|
208Kb/4P |
PIN DIODE
1984 |
|
1SV157
|
209Kb/4P |
PIN DIODE
1984 |
Toshiba Semiconductor |
1SV160
|
104Kb/2P |
VARIABLE CAPACITANCE DIODE (AFC APLICATION FOR FM RECEIVER)
|
|
1SV161
|
38Kb/1P |
Silicon Epitaxial Planar Type Variable Capacitance Diode
|
|
1SV162
|
34Kb/1P |
VARIABLE CAPACITANCE DIODE
|
NXP Semiconductors |
1SV172
|
9Mb/130P |
RF Manual 16th edition
June 2012 |
Toshiba Semiconductor |
1SV172
|
94Kb/2P |
DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)
|
|
1SV172
|
201Kb/3P |
VHF~UHF Band RF Attenuator Applications
|
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