| 制造商 | 部件名 | 数据表 | 功能描述 |
Seme LAB |
2N869AXDCSM
|
15Kb/1P |
Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications
|
|
2N869AX
|
15Kb/1P |
Bipolar PNP Device in a Hermetically sealed TO18
|
Central Semiconductor C... |
2N869A
|
33Kb/1P |
Small Signal Transistors
|
Seme LAB |
2N869A
|
14Kb/1P |
Bipolar PNP Device in a Hermetically sealed TO18
|
New Jersey Semi-Conduct... |
2N861
|
173Kb/1P |
Silicon Precision Alloy Trnasistors (SPAT)
|
|
2N863
|
173Kb/1P |
Silicon Precision Alloy Trnasistors (SPAT)
|
Central Semiconductor C... |
2N864
|
33Kb/1P |
Small Signal Transistors
|
|
2N865
|
33Kb/1P |
Small Signal Transistors
|
New Jersey Semi-Conduct... |
2N865
|
173Kb/1P |
Silicon Precision Alloy Trnasistors (SPAT)
|
Seme LAB |
2N869
|
11Kb/1P |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package
|
New Jersey Semi-Conduct... |
2N869
|
115Kb/1P |
PNP TRANSISTORS
|
Unisonic Technologies |
2N80
|
170Kb/6P |
2 Amps, 800 Volts N-CHANNEL POWER MOSFET
|
|
2N80
|
235Kb/6P |
2A, 800V N-CHANNEL POWER MOSFET
|
Inchange Semiconductor ... |
2N80
|
68Kb/2P |
Drain Current ID= 2.4A@ TC=25C
|
Unisonic Technologies |
2N80-C
|
663Kb/9P |
2.0A, 800V NHANNEL POWER MOSFET
|
American Microsemicondu... |
2N808
|
1Mb/2P |
GERMABIUM PNP MESA TRANSISTORS
|
Unisonic Technologies |
2N80G-TF3-T
|
170Kb/6P |
2 Amps, 800 Volts N-CHANNEL POWER MOSFET
|
|
2N80G-TF3-T
|
235Kb/6P |
2A, 800V N-CHANNEL POWER MOSFET
|
|
2N80G-TF3-T
|
263Kb/7P |
N-CHANNEL POWER MOSFET
|
|
2N80G-TM3-R
|
235Kb/6P |
2A, 800V N-CHANNEL POWER MOSFET
|
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