| 制造商 | 部件名 | 数据表 | 功能描述 |
Toshiba Semiconductor |
2SC5703
|
137Kb/5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
Hitachi Semiconductor |
2SC5700
|
102Kb/10P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Renesas Technology Corp |
2SC5700
|
192Kb/9P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
|
2SC5700WB-TR-E
|
192Kb/9P |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
Hitachi Semiconductor |
2SC5702
|
109Kb/16P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
Renesas Technology Corp |
2SC5702
|
277Kb/15P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
|
2SC5702ZS-TL-E
|
277Kb/15P |
Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
|
Toshiba Semiconductor |
2SC5703
|
166Kb/5P |
TOSHIBA Transistor Silicon NPN Epitaxial Type
|
|
2SC5703
|
137Kb/5P |
Silicon NPN Epitaxial Type High-Speed Switching Applications
|
|
2SC5703
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
|
2SC5703
|
165Kb/5P |
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2016-09-27 |
Renesas Technology Corp |
2SC5704
|
343Kb/26P |
NPN SILICON RF TRANSISTOR
2001 |
|
2SC5704-T3
|
343Kb/26P |
NPN SILICON RF TRANSISTOR
2001 |
Mospec Semiconductor |
2SC5706
|
45Kb/2P |
POWER TRANSISTOR(5A,50V,15W)
|
Sanyo Semicon Device |
2SC5706
|
40Kb/5P |
High Current Switching Applications
|
Weitron Technology |
2SC5706
|
190Kb/5P |
NPN EPITAXIAL PLANAR TRANSISTOR
|
Sanyo Semicon Device |
2SC5706
|
67Kb/5P |
High Current Switching Applications
|
|
2SC5706
|
507Kb/10P |
High-Current Switching Applications
|
ON Semiconductor |
2SC5706
|
424Kb/10P |
Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
September, 2013 |
Foshan Blue Rocket Elec... |
2SC5706
|
514Kb/6P |
Silicon NPN transistor in a TO-220 Plastic Package.
|
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